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• 1 1%纯铝的标准规范半导体引线焊接用硅线 - 摘要
  

  1.1 This specification covers aluminum???18201;% silicon alloy wire for internal connections in semiconductor devices and is limited to wire of diameter up to and including 76 ??m (0.003 in.). For diameters larger than 76 ??m (0.003 in.), the specifications are to be agreed upon between the purchaser and the supplier.

  1.2 The values stated in SI units are to be regarded as the standard, regardless of whether they appear first or second in a table. Values given in parentheses are for information only.

• ASTM F487-2013 - 中外标准 - ASTM- 2013/1 - 现行
• 关键词：silicon aluminum wire  wire bonding
  

• 2 半导体器件电离辐射 (总剂量) 效应试验的标准指南 - 摘要
  
  5. Significance and Use

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  5.1 Electronic circuits used in space, military, and nuclear power systems may be exposed to various levels of ionizing radiation. It is essential for the design and fabrication of such circuits that test methods be available that can determine the vulnerability or hardness (measure of nonvulnerability) of components to be used in such systems.

  5.2 Some manufacturers currently are selling semiconductor parts with guaranteed hardness ratings. Use of this guide provides a basis for standardized qualification and acceptance testing.

  1.1 This guide presents background and guidelines for establishing an appropriate sequence of tests and data analysis procedures for determining the ionizing radiation (total dose) hardness of microelectronic devices for dose rates below 300 rd(SiO₂)/s. These tests and analysis will be appropriate to assist in the determination of the ability of the devices under test to meet specific hardness requirements or to evaluate the parts for use in a range of radiation environments.

  1.2 The methods and guidelines presented will be applicable to characterization, qualification, and lot acceptance of silicon-based MOS and bipolar discrete devices and integrated circuits. They will be appropriate for treatment of the effects of electron and photon irradiation.

  1.3 This guide provides a framework for choosing a test sequence based on general characteristics of the parts to be tested and the radiation hardness requirements or goals for these parts.

  1.4 This guide provides for tradeoffs between minimizing the conservative nature of the testing method and minimizing the required testing effort.

  1.5 Determination of an effective and economical hardness test typically will require several kinds of decisions. A partial enumeration of the decisions that typically must be made is as follows:

  1.5.1 Determination of the Need to Perform Device Characterization???For some cases it may be more appropriate to adopt some kind of worst case testing scheme that does not require device characterization. For other cases it may be most effective to determine the effect of dose-rate on the radiation sensitivity of a device. As necessary, the appropriate level of detail of such a characterization also must be determined.

  1.5.2 Determination of an Effective Strategy for Minimizing the Effects of Irradiation Dose Rate on the Test Result???The results of radiation testing on some types of devices are relatively insensitive to the dose rate of the radiation applied in the test. In contrast, many MOS devices and some bipolar devices have a significant sensitivity to dose rate. Several different strategies for managing the dose rate sensitivity of test results will be discussed.

  1.5.3 Choice of an Effective Test Methodology???The selection of effective test methodologies will......

• ASTM F1892-2012 - 中外标准 - ASTM- 2012/1 - 现行
• 关键词：ASIC (application specific integrated circuit)  bipolar  cobalt 60 testing  ELDRS (enhanced low dose rate sensitivity)  gamma ray tests  ionizing radiation testing  MOS  radiation hardness  semiconductor devices  time dependent effects  total dose testing  X-ray testing
  

• 3 半导体装置重离子辐照导致的单粒子效应现象(SEP)测量的标准指南 - 摘要
  

  Many modern integrated circuits, power transistors, and other devices experience SEP when exposed to cosmic rays in interplanetary space, in satellite orbits or during a short passage through trapped radiation belts. It is essential to be able to predict the SEP rate for a specific environment in order to establish proper techniques to counter the effects of such upsets in proposed systems. As the technology moves toward higher density ICs, the problem is likely to become even more acute.

  This guide is intended to assist experimenters in performing ground tests to yield data enabling SEP predictions to be made.

  1.1 This guide defines the requirements and procedures for testing integrated circuits and other devices for the effects of single event phenomena (SEP) induced by irradiation with heavy ions having an atomic number Z x2265; 2. This description specifically excludes the effects of neutrons, protons, and other lighter particles that may induce SEP via another mechanism. SEP includes any manifestation of upset induced by a single ion strike, including soft errors (one or more simultaneous reversible bit flips), hard errors (irreversible bit flips), latchup (persistent high conducting state), transients induced in combinatorial devices which may introduce a soft error in nearby circuits, power field effect transistor (FET) burn-out and gate rupture. This test may be considered to be destructive because it often involves the removal of device lids prior to irradiation. Bit flips are usually associated with digital devices and latchup is usually confined to bulk complementary metal oxide semiconductor, (CMOS) devices, but heavy ion induced SEP is also observed in combinatorial logic programmable read only memory, (PROMs), and certain linear devices that may respond to a heavy ion induced charge transient. Power transistors may be tested by the procedure called out in Method 1080 of MIL STD 750.

  1.2 The procedures described here can be used to simulate and predict SEP arising from the natural space environment, including galactic cosmic rays, planetary trapped ions, and solar flares. The techniques do not, however, simulate heavy ion beam effects proposed for military programs. The end product of the test is a plot of the SEP cross section (the number of upsets per unit fluence) as a function of ion LET (linear energy transfer or ionization deposited along the ion''s path through the semiconductor). This data can be combined with the system''s heavy ion environment to estimate a system upset rate.

  1.3 Although protons can cause SEP, they are not included in this guide. A separate guide addressing proton induced SEP is being considered.

  1.4 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.

  1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

• ASTM F1192-2011 - 中外标准 - ASTM- 2011/1 - 现行
• 关键词：SEB  SEE  SEFI  SEGR  SEL  SEP  SEP cross section  SEU  single event  single event effect  single event phenomena  single event upset  space environment：Destructive testing--semiconductors  Dosimetry  Electrical conductors (semiconductors)  Electron radiation  Failure end point--electronic components/devices  Fluence  Galactic cosmic rays  Germanium--semiconductor applications  Integrated circuits  Ionizing radiation  Irradiance/irradiation--semiconductors  Linear energy transfer (LET)  Radiation exposure--electronic components/devices  Silicon semiconductors  Single crystal silicon semiconductors  Single-event phenomenon (SEP)  Solar flares  Upset threshold
  

• 4 利用次临界伏安特性测定由于氧化空穴和界面性能产生的电离辐射感生金属氧化物半导体场应晶体管临界电压偏移分量的标准试验方法 - 摘要
  

  The electrical properties of gate and field oxides are altered by ionizing radiation. The method for determining the dose delivered by the source irradiation is discussed in Practices E666, E668, E1249, and Guide E1894. The time dependent and dose rate effects of the ionizing radiation can be determined by comparing pre- and post-irradiation voltage shifts, x0394;V_ot and x0394;V_it. This test method provides a means for evaluation of the ionizing radiation response of MOSFETs and isolation parasitic MOSFETs.

  The measured voltage shifts, x0394;V_ot and x0394;V_it, can provide a measure of the effectiveness of processing variations on the ionizing radiation response.

  This technique can be used to monitor the total-dose response of a process technology.

  1.1 This test method covers the use of the subthreshold charge separation technique for analysis of ionizing radiation degradation of a gate dielectric in a metal-oxide-semiconductor-field-effect transistor (MOSFET) and an isolation dielectric in a parasitic MOSFET. ^{, ,} The subthreshold technique is used to separate the ionizing radiation-induced inversion voltage shift, x0394;V_INV into voltage shifts due to oxide trapped charge, x0394;V_ot and interface traps, x0394;V_it. This technique uses the pre- and post-irradiation drain to source current versus gate voltage characteristics in the MOSFET subthreshold region.

  1.2 Procedures are given for measuring the MOSFET subthreshold current-voltage characteristics and for the calculation of results.

  1.3 The application of this test method requires the MOSFET to have a substrate (body) contact.

  1.4 Both pre- and post-irradiation MOSFET subthreshold source or drain curves must follow an exponential dependence on gate voltage for a minimum of two decades of current.

  1.5 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.

  1.6 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

• ASTM F996-2011 - 中外标准 - ASTM- 2011/1 - 现行
• 关键词：c/v characteristics  current&x2013  voltage characteristics  interface states  ionizing radiation  MOSFET  oxide-trapped holes  threshold voltage shift  trapped holes  Current measurement--semiconductors  Electrical conductors (semiconductors)  Gate and field oxides  MOSFETs  Radiation exposure--electronic components/devices  Silicon semiconductors  Threshold voltage
  

• 5 测量半导体器件电离剂量率存活性和烧断的指南 - 摘要
  

  The use of FXR or LINAC radiation sources for the determination of high dose-rate burnout in semiconductor devices is addressed in this guide. The goal of this guide is to provide a systematic approach to testing semiconductor devices for burnout or survivability.

  The different types of failure modes that are possible are defined and discussed in this guide. Specifically, failure can be defined by a change in device parameters, or by a catastrophic failure of the device.

  This guide can be used to determine if a device survives (that is, continues to operate and function within the specified performance parameters) when irradiated to a predetermined dose-rate level; or, the guide can be used to determine the dose-rate burnout failure level (that is, the minimum dose rate at which burnout failure occurs). However, since this latter test is destructive, the minimum dose-rate burnout failure level must be determined statistically.

  1.1 This guide defines the detailed requirements for testing semiconductor devices for short-pulse high dose-rate ionization-induced survivability and burnout failure. The test facility shall be capable of providing the necessary dose rates to perform the measurements. Typically, large flash X-ray (FXR) machines operated in the photon mode, or FXR e-beam facilities are utilized because of their high dose-rate capabilities. Electron Linear Accelerators (LINACs) may be used if the dose rate is sufficient. Two modes of test are described: (1) A survivability test, and (2) A burnout failure level test.

  1.2 The values stated in International System of Units (SI) are to be regarded as standard. No other units of measurement are included in this standard.

• ASTM F1893-2011 - 中外标准 - ASTM- 2011/1 - 现行
• 关键词：burnout  failure  high dose-rate  integrated circuits  ionizing radiation  latchup  microcircuits  semiconductor devices  survivability
  

• 6 利用亚阈值安伏特性分离由于氧化空穴和界面态产生的电离辐射感应金属氧化物半导体场效应晶体管阈电压偏移的标准试验方法 - 摘要
  

  The electrical properties of gate and field oxides are altered by ionizing radiation. The method for determining the dose delivered by the source irradiation is discussed in Practices E666, E668, E1249, and Guide E1894. The time dependent and dose rate effects of the ionizing radiation can be determined by comparing pre- and post-irradiation voltage shifts, x0394;V_ot and x0394;V_it. This test method provides a means for evaluation of the ionizing radiation response of MOSFETs and isolation parasitic MOSFETs.

  The measured voltage shifts, x0394;V_ot and x0394;V_it, can provide a measure of the effectiveness of processing variations on the ionizing radiation response.

  This technique can be used to monitor the total-dose response of a process technology.

  1.1 This test method covers the use of the subthreshold charge separation technique for analysis of ionizing radiation degradation of a gate dielectric in a metal-oxide-semiconductor-field-effect transistor (MOSFET) and an isolation dielectric in a parasitic MOSFET. ^{, ,} The subthreshold technique is used to separate the ionizing radiation-induced inversion voltage shift, x0394;V_INV into voltage shifts due to oxide trapped charge, x0394;V_ot and interface traps, x0394;V_it. This technique uses the pre- and post-irradiation drain to source current versus gate voltage characteristics in the MOSFET subthreshold region.

  1.2 Procedures are given for measuring the MOSFET subthreshold current-voltage characteristics and for the calculation of results.

  1.3 The application of this test method requires the MOSFET to have a substrate (body) contact.

  1.4 Both pre- and post-irradiation MOSFET subthreshold source or drain curves must follow an exponential dependence on gate voltage for a minimum of two decades of current.

  1.5 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.

  1.6 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

• ASTM F996-2010 - 中外标准 - ASTM- 2010/1 - 现行
• 关键词：c/v characteristics  current&x2013  voltage characteristics  interface states  ionizing radiation  MOSFET  oxide-trapped holes  threshold voltage shift  trapped holes  Current measurement--semiconductors  Electrical conductors (semiconductors)  Gate and field oxides  MOSFETs  Radiation exposure--electronic components/devices  Silicon semiconductors  Threshold voltage
  

• 7 测量硅半导体器件中中子感应位移故障的快速退火用标准指南 - 摘要
  

  Electronic circuits used in many space, military, and nuclear power systems may be exposed to various levels and time profiles of neutron radiation. It is essential for the design and fabrication of such circuits that test methods be available that can determine the vulnerability or hardness (measure of nonvulnerability) of components to be used in them. A determination of hardness is often necessary for the short term (x2248;100 x03BC;s) as well as long term (permanent damage) following exposure. See Practice E722.

  1.1 This guide defines the requirements and procedures for testing silicon discrete semiconductor devices and integrated circuits for rapid-annealing effects from displacement damage resulting from neutron radiation. This test will produce degradation of the electrical properties of the irradiated devices and should be considered a destructive test. Rapid annealing of displacement damage is usually associated with bipolar technologies.

  1.1.1 Heavy ion beams can also be used to characterize displacement damage annealing (1) , but ion beams have significant complications in the interpretation of the resulting device behavior due to the associated ionizing dose. The use of pulsed ion beams as a source of displacement damage is not within the scope of this standard.

  1.2 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.

  1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to consult and establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

• ASTM F980-2010 - 中外标准 - ASTM- 2010/1 - 现行
• 关键词：annealing factor  annealing function  displacement damage  integrated circuits  neutron damage  neutron degradation  photoconducting device  rapid annealing  semiconductor devices  Annealing  Defects--semiconductors  Destructive testing--semiconductors  Displacement--electronic materials/applications  Electrical conductors (semiconductors)  Electronic hardness  Neutron radiation  Pulsed neutron-radiation source  Radiation exposure--electronic components/devices  Radiation-hardness testing  Rapid annealing effects  Short-term damage  Vulnerability
  

• 8 使用2N2222A硅双极晶体管作中子光谱传感器和位移损坏监控器的标准试验方法 - 摘要
  

  The neutron spectrum in a test (simulation) environment must be known in order to use a measured device response in the test environment to predict the device performance in an operational environment (see Practice E1854). Typically, neutron spectra are determined by use of a set of sensors that have response functions that are sensitive over the neutron energy region to which the device under test (DUT) responds (see Guide E721). In particular, for silicon bipolar devices exposed in reactor neutron spectra, this effective energy range is between 0.01 and 10 MeV. A typical set of activation reactions that lack fission reactions from nuclides such as ²³⁵U, ²³⁷Np, or ²³⁹Pu, will have very poor sensitivity to the spectrum between 0.01 and 2 MeV. For a pool-type reactor spectrum, 70 % of the DUT electronic damage response may lie in this range. Often, fission foils are not included in the sensor set for spectrum determinations because their use must be licensed, and they require special handling for health physics considerations. The silicon transistors provide the needed response to define the spectrum in this critical range.

  If fission foils are a part of the sensor set, the silicon sensor provides confirmation of the spectrum shape.

  Bipolar transistors, such as type 2N2222A, are inexpensive, are smaller than fission foils contained in a boron ball, and are sensitive to a part of the neutron spectrum important to the damage of modern silicon electronics. They also can be used directly in arrays to map 1-MeV(Si) equivalent fluence. The proper set of steps to take in reading the transistor-gain degradation is the primary subject of this test method.

  1.1 This test method covers the use of 2N2222A silicon bipolar transistors as dosimetry sensors in the determination of neutron energy spectra, and as silicon 1-MeV(Si) equivalent displacement damage fluence monitors.

  1.2 The neutron displacement damage is especially valuable as a neutron spectrum sensor in the range 0.1 to 2.0 MeV when fission foils are not available. It has been applied in the fluence range between 2 x00D7; 10 ¹² n/cm² and 1 x00D7; 10¹⁴ n/cm² and should be useful up to 10¹⁵ n/cm². This test method details the steps for the acquisition and use of silicon 1-MeV equivalent fluence information (in a manner similar to the use of activation foil data) for the determination of neutron spectra.

  1.3 In addition, this sensor can provide important confirmation of neutron spectra determined with other sensors, and yields a direct measurement of the silicon 1-MeV fluence by the transfer technique.

  1.4 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.

  1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory requirements prior to use.

• ASTM E1855-2010 - 中外标准 - ASTM- 2010/1 - 现行
• 关键词：displacement damage  neutron damage  radiation hardness  silicon transistors  spectrum sensors  Damage assessment--nuclear materials/applications  Displacement--electronic materials/applications  Radiation-hardness testing  Silicon bipolar transistors
  

• 9 半导体和电子元件射线检验的标准实施规程 - 摘要
  

  4.1x00a0;This practice establishes the basic minimum parameters and controls for the application of radiological examination of electronic devices. Factors such as device handling, equipment, ESDS, materials, personnel qualification, procedure and quality requirements, reporting, records and radiation sensitivity are addressed. This practice is written so it can be specified on the engineering drawing, specification or contract. It is not a detailed how-to procedure and must be supplemented by a detailed examination technique/procedure (see 9.1).

  4.2x00a0;This practice does not set limits on radiation dose, but does list requirements to limit and document radiation dose to devices. When radiation dose limits are an issue, the requestor of radiological examinations must be cognizant of this issue and state any maximum radiation dose limitations that are required in the contractual agreement between the using parties.

  1.1x00a0;This practice provides the minimum requirements for nondestructive radiologic examination of semiconductor devices, microelectronic devices, electromagnetic devices, electronic and electrical devices, and the materials used for construction of these items.

  1.2x00a0;This practice covers the radiologic examination of these items to detect possible defective conditions within the sealed case, especially those resulting from sealing the lid to the case, and internal defects such as extraneous material (foreign objects), improper interconnecting wires, voids in the die attach material or in the glass (when sealing glass is used) or physical damage.

  1.3x00a0;The values stated in inch-pound units are to be regarded as standard. No other units of measurement are included in this practice.

  1.4x00a0;This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

• ASTM E1161-2009(2014) - 中外标准 - ASTM- 2009/1 - 现行
• 关键词：capacitor  diode  electronic device  hybrid  inductor  microcircuits  microcircuit array  monolithic  multichip  nondestructive testing  radiographic  radiologic  radiology  radioscopy  rectifier  relay  resistor  semiconductor  switches  transformer  transistor  tunnel diode  voltage regulator  x-ray
  

• 10 半导体和电子元件的放射性的标准实施规程 - 摘要
  

  This practice establishes the basic minimum parameters and controls for the application of radiological examination of electronic devices. Factors such as device handling, equipment, ESDS, materials, personnel qualification, procedure and quality requirements, reporting, records and radiation sensitivity are addressed. This practice is written so it can be specified on the engineering drawing, specification or contract. It is not a detailed how-to procedure and must be supplemented by a detailed examination technique/procedure (see 9.1).

  This practice does not set limits on radiation dose, but does list requirements to limit and document radiation dose to devices. When radiation dose limits are an issue, the requestor of radiological examinations must be cognizant of this issue and state any maximum radiation dose limitations that are required in the contractual agreement between the using parties.

  1.1 This practice provides the minimum requirements for nondestructive radiologic examination of semiconductor devices, microelectronic devices, electromagnetic devices, electronic and electrical devices, and the materials used for construction of these items.

  1.2 This practice covers the radiologic examination of these items to detect possible defective conditions within the sealed case, especially those resulting from sealing the lid to the case, and internal defects such as extraneous material (foreign objects), improper interconnecting wires, voids in the die attach material or in the glass (when sealing glass is used) or physical damage.

  1.3 The values stated in inch-pound units are to be regarded as standard. No other units of measurement are included in this practice.

  1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

• ASTM E1161-2009 - 中外标准 - ASTM- 2009/1 - 现行
• 关键词：capacitor  diode  electronic device  hybrid  inductor  microcircuits  microcircuit array  monolithic  multichip  nondestructive testing  radiographic  radiologic  radiology  radioscopy  rectifier  relay  resistor  semiconductor  switches  transformer  transistor  tunnel diode  voltage regulator  x-ray  Defects--semiconductors  Electrical conductors (semiconductors)  Electronic materials/applications  Radiographic examination  Sealing glass defects  Voids  X-irradiation